دیتاشیت WNMD2176-6/TR
مشخصات دیتاشیت
| نام دیتاشیت |
WNMD2176-6/TR
|
| حجم فایل |
59.954
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
-
Type:
2 N-Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
WILLSEMI(Will Semicon) WNMD2176-6/TR
-
Operating Temperature:
+150°C@(Tj)
-
Power Dissipation (Pd):
900mW
-
Total Gate Charge (Qg@Vgs):
3.1nC@4.5V
-
Drain Source Voltage (Vdss):
20V
-
Input Capacitance (Ciss@Vds):
190pF@10V
-
Continuous Drain Current (Id):
2.6A
-
Gate Threshold Voltage (Vgs(th)@Id):
780mV@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
36pF@10V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
55mΩ@4.5V,2.5A
-
Package:
SOT-23-6L
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Manufacturer:
WILLSEMI(Will Semicon)
